1 dual p-channel 30 v (d-s) mosfet feature s ?tre nchfet ? power mosfet ? aec-q10 1 qualified c ?100 % r g and uis tested ? not e s a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. when mounted on 1" squa re pcb (fr-4 material). c. parametric verification ongoing. product summary v ds (v) - 30 r ds(on) ( ? ) at v gs = - 10 v 0.032 r ds(on) ( ? ) at v gs = - 4.5 v 0.045 i d (a) per le g -6.6 configuration dual s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op vi e w 2 3 4 1 absolute maximum ratings (t c = 25 c , unless otherwise noted) parameter symbol limit un it dr ain-source voltage v ds - 30 v gate -so u rce voltage v gs 20 continuous drain current t c = 25 c i d - 6.6 a t c = 125 c - 3.8 continuous source curr ent (diode conduction) i s - 3 pu ls ed drain current a i dm - 26 si ng le pulse avalanche current l = 0.1 mh i as - 17 si ng le pulse avalanche energy e as 14 mj maxi mu m power dissipation a t c = 25 c p d 3.3 w t c = 125 c 1.1 operating junction and storage temperature range t j , t stg - 55 to + 175 c ther ma l resistance ratings parameter symbol limit unit junction-to-ambient pcb mount b r thja 110 c/ w j unction-to-foot (drain) r thjf 45 www.din-tek.jp dt m4 9 53 bdy
2 no t e s a . pul s e test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. ? ? ? ? ? stresses beyond those listed under absolute ma ximum ra tings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless ot he rwise noted) parameter symbol test co ndi tion s min. typ. max. unit static drain-source br eakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 - - v ga te-s ource threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.5 - 2.0 - 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na z e ro gate voltage drain current i dss v gs = 0 v v ds = - 30 v - - - 1 a v gs = 0 v v ds = - 30 v, t j = 125 c - - - 50 v gs = 0 v v ds = - 30 v, t j = 175 c - - - 150 on-state drain current a i d(on) v gs = - 10 v v ds ??? - 5 v - 20 - - a d r ain-source on-state resistance a r ds(on) v gs = - 10 v i d = - 4.9 a - 0.025 0.032 ? v gs = - 10 v i d = - 4.9 a, t j = 125 c - - 0.066 v gs = - 10 v i d = - 4.9 a, t j = 175 c - - 0 .076 v gs = - 4.5 v i d = - 3.7 a - 0.035 0.045 fo rwa rd transconductance b g fs v ds = - 15 v, i d = - 4.9 a - 9 - s dynamic b input capacitance c iss v gs = 0 v v ds = - 25 v, f = 1 mhz - 557 670 pf output capacitance c oss - 126 190 reverse t r ansfer capacitance c rss - 90 115 total gate charge c q g v gs = - 10 v v ds = - 15 v, i d = - 4.9 a -1522 nc gate-sour c e charge c q gs -2.1 gate-drain charge c q gd -3.5- gate resistance r g f = 1 mhz 2.60 5.26 8.50 ? turn-o n d elay time c t d(on) v dd = - 15 v, r l = 6.8 ? i d ? - 1 a, v gen = - 10 v, r g = 1 ? -3 5 ns rise time c t r -914 turn-off d elay time c t d(off) -2030 fall ti m e c t f -914 source- d rain diode ratings and characteristics b pulsed current a i sm --- 26a fo r ward voltage v sd i f = - 2 a, v gs = 0 v - - 0 . 8 - 1.2 v www.din-tek.jp dt m4 9 53 bdy
3 typical char act eristics (t a = 25 c , u nless otherwise noted) output characteristics transfer characteristics capacitance transfer characteristics on-resistance vs. drain current gate charge 0 6 12 18 24 30 0 2 4 6 8 10 i d - drain c urrent (a) v d s -drai n -to- s ource voltage (v) v gs = 10 v thru 6 v v gs = 3 v v gs = 4 v v gs = 5 v 0 2 4 6 8 10 0 1 2 3 4 5 i d - d rai n c urrent (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 1 2 5 c t c = - 55 c 0 200 400 600 800 1000 0 5 10 15 20 25 30 c - capacitance (pf) v d s -drai n -to- s ource voltage (v) c i ss c o ss c r ss 0 6 12 18 24 30 0 2 4 6 8 10 i d - drain c urrent (a) v gs - g ate-to- s ource voltage (v ) t c = 125 c t c = - 55 c t = 25 c c 0.00 0.03 0.06 0.09 0.12 0.15 0 6 12 18 24 30 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 3 6 9 12 15 v gs - g ate-to- s ource v o ltage (v) q g -tota l g ate charge (nc) i d = 4.9 a v d s = 15 v www.din-tek.jp dt m4 9 53 bdy
4 typical ch ar acteristics (t a = 25 c , unless otherwise noted) on-r es istance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs. junction temperature 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on- r e s i s tance (normalized) t j - juncti on temperature ( c) i d = 4.9 a v gs = 10 v v gs = 4.5 v 0.00 0.05 0.10 0.15 0.20 0.25 0246810 r d s (on) -on-r e s i s tance () v gs - g ate-to- s ource vo ltage (v) t j = 150 c t j = 25 c 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a ) v s d - s ource- to- d rai n voltage (v) t j = 150 c t j = 25 c -0.5 -0 . 2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -tem p erature ( c) i d = 250 a i d = 5 m a -40 -38 -3 6 -3 4 -32 -30 - 50 - 25 0 25 50 75 100 125 150 175 v d s -dra i n-to- s ource voltage (v) t j - juncti on temperature ( c) i d = 1 m a www.din-tek.jp dt m4 9 53 bdy
5 therma l r atings (t a = 25 c, un less otherwise noted) safe o p erating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drai n c urrent (a) v d s -dra i n-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 100 m s limited by r d s (on) * 1 m s i dm limited t c = 25 c s ing l e pul s e bvd ss limi ted 10 m s 100 s 1 s 10 s , dc 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wav e pulse duration (s) normalized ef f ectiv e transient thermal impedance 1. duty cycle, d = 2. p er unit base = r th j a = 110 c/w 3. t jm - t a = p dm z thja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 www.din-tek.jp dt m4 9 53 bdy
6 therma l r atings (t a = 25 c, un less otherwise noted) normali zed thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction-to-ambient (25 c) ? - normalized transient thermal impedance junction-to-foot (25 c) ? are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 -3 10 -2 11 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w a ve pulse duration (s) normalized ef f ectiv e transient thermal impedance www.din-tek.jp dt m4 9 53 bdy
1 di m millimeter s inc hes min ma x min max a 1 .35 1.75 0.053 0.069 a 1 0 .10 0.20 0.004 0.008 b 0.35 0.51 0.01 4 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all lea d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (ga ge pla ne) soic (narrow): 8-lead jedec p a rt n u m b er: ms -012 s package information www.din-tek.jp
1 appl ication note r ecommended minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r eturn to inde x application note www.din-tek.jp
1 disclaimer all product, produ ct specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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